This IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off between switching performance and low on-state behavior.
- Short circuit withstand time 10μs
- Low Cres / Cies ratio (no cross conduction susceptibility)
- Low on-voltage drop (VCE(sat))
- Very soft ultra fast recovery antiparallel diode
- Switching losses include diode recovery energy
|14 A, 600 V short-circuit rugged IGBT||TO-220FP||工业||Ecopack2|
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