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These devices are very fast IGBTs developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior.
Key Features
- Low on voltage drop (VCE(sat))
- Low CRES / CIES ratio (no cross-conduction susceptibility)
- Short-circuit withstand time 10 μs
- IGBT co-packaged with ultrafast free-wheeling diode
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开发工具硬件
| 产品型号 | 供货状态 | 一般描述 | 封装 | 等级规格 | 符合RoHS级别 | Material Declaration** |
|---|---|---|---|---|---|---|
| STGF19NC60KD |
批量生产
|
20 A, 600 V short circuit rugged IGBT | TO-220FP | 工业 | Ecopack2 |
|
STGF19NC60KD
Package:
20 A, 600 V short circuit rugged IGBTMaterial Declaration**:
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
