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These devices are very fast IGBTs developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior.
主要特性
- Low on voltage drop (VCE(sat))
- Low CRES / CIES ratio (no cross-conduction susceptibility)
- Short-circuit withstand time 10 μs
- IGBT co-packaged with ultrafast free-wheeling diode
样片和购买
| 型号 | Package | Packing Type | Marketing Status | Budgetary Price (US$)* | Quantity | ECCN (US) | Country of Origin | General Description | Order from Distributors | Order from ST |
|---|---|---|---|---|---|---|---|---|---|---|
| STGF19NC60KD | TO-220FP | Tube |
Active
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0.957 | 500 | EAR99 | CHINA | 20 A, 600 V short circuit rugged IGBT | Check Availability | Buy now |
(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors
精选 视频
开发工具硬件
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Picture Part number 制造商 Description ST-IGBT-FINDER ST IGBT product finder application for Android and iOS 型号IGBT product finder application for Android and iOS
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| 型号 | Marketing Status | General Description | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|---|---|
| STGF19NC60KD |
Active
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20 A, 600 V short circuit rugged IGBT | TO-220FP | 工业 | Ecopack2 |
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STGF19NC60KD
Package:
20 A, 600 V short circuit rugged IGBTMaterial Declaration**:
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
