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These devices are very fast IGBTs developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior.
主要特性
- Low on voltage drop (VCE(sat))
- Low CRES / CIES ratio (no cross-conduction susceptibility)
- Short-circuit withstand time 10 μs
- IGBT co-packaged with ultrafast free-wheeling diode
样片和购买
| 产品型号 | 封装 | 包装类型 | 供货状态 | 预算价格(US$) | 数量 | ECCN (US) | Country of Origin | 描述 | 从分销商订购 | 从ST订购 |
|---|---|---|---|---|---|---|---|---|---|---|
| STGF19NC60KD | TO-220FP | Tube |
Active
|
0.957 | 500 | EAR99 | CHINA | 20 A, 600 V short circuit rugged IGBT | 查看供货情况 | 立即购买 |
(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors
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开发工具硬件
| 产品型号 | 供货状态 | 描述 | 封装 | 等级规格 | 符合RoHS级别 | 材料声明** |
|---|---|---|---|---|---|---|
| STGF19NC60KD |
Active
|
20 A, 600 V short circuit rugged IGBT | TO-220FP | 工业 | Ecopack2 |
|
STGF19NC60KD
Package:
20 A, 600 V short circuit rugged IGBTMaterial Declaration**:
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
