产品概述
描述
The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. A very fast soft recovery diode is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.
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所有功能
- Maximum junction temperature : TJ = 175 °C
- Low VCE(sat) = 1.65 V (typ.) @ IC = 20 A
- Very fast and soft recovery co-packaged diode
- Minimized tail current
- Tight parameter distribution
- Low thermal resistance
- Positive VCE(sat) temperature coefficient
特别推荐
EDA符号、封装和3D模型
STMicroelectronics - STGF20H65DFB2
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符号
封装
3D模型
全部资源
| Resource title | 版本 | Latest update |
|---|
SPICE models (1)
| Resource title | 版本 | Latest update | ||
|---|---|---|---|---|
| ZIP | 1.0 | 19 May 2020 | 19 May 2020 |
质量与可靠性
| 产品型号 | Marketing Status | 一般描述 | 封装 | 等级规格 | 符合RoHS级别 | 材料声明** |
|---|---|---|---|---|---|---|
| STGF20H65DFB2 | 批量生产 | Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a TO-220FP package | TO-220FP | 工业 | Ecopack2 | |
STGF20H65DFB2
Package:
Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a TO-220FP packageMaterial Declaration**:
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持。
样片和购买
| 产品型号 | Order from distributors | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度（ºC） | Country of Origin | 一般描述 | Budgetary Price (US$)*/Qty | Country of Origin | 一般描述 | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | ||||||||||||||
| STGF20H65DFB2 | distributors 无法联系到经销商，请联系我们的销售办事处 | 批量生产 | EAR99 | NEC | Tube | TO-220FP | -55 | 175 | CHINA | Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a TO-220FP package | | CHINA | Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a TO-220FP package | ||