Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advaced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “H” identifies a family optimized for high frequency application in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop.
- Low on voltage drop (Vcesat)
- Very soft ultra fast recovery antiparallel diode
- Low CRES/ CIESratio (no cross-conduction susceptibility)
- High frequency operation
|N-channel 600 V, 7 A Very fast IGBT||TO-220FP||工业||Ecopack2||
Package:N-channel 600 V, 7 A Very fast IGBT
N-channel 600 V, 7 A Very fast IGBT
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