Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH IGBTs, with outstanding performances. The suffix S identifies a family optimized achieve minimum on-voltage drop for low frequency applications (<1kHz).
- POLYSILICON GATE VOLTAGE DRIVEN
- LOW ON-VOLTAGE DROP
- LOW THRESHOLD VOLTAGE
- HIGH CURRENT CAPABILITY
- LOW GATE CHARGE
|7 A, 600 V, low drop IGBT||TO-220FP||工业||Ecopack2|
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.