This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, the positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
- Maximum junction temperature: TJ = 175 °C
- Very high speed switching series
- Tail-less switching off
- VCE(sat) = 1.8 V (typ.) @ IC = 20 A
- Tight parameters distribution
- Safe paralleling
- Low thermal resistance
- Very fast soft recovery antiparallel diode
- Lead free package
|Trench gate field-stop IGBT, V series 600 V, 20 A very high speed||TO-3PF||工业||Ecopack1||
Package:Trench gate field-stop IGBT, V series 600 V, 20 A very high speed
Trench gate field-stop IGBT, V series 600 V, 20 A very high speed
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