-
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.
主要特性
- 6 µs of short-circuit withstand time
- VCE(sat) = 1.55 V (typ.) @ IC = 10 A
- Tight parameter distribution
- Safer paralleling
- Positive VCE(sat) temperature coefficient
- Low thermal resistance
- Soft and very fast recovery antiparallel diode
- Maximum junction temperature: TJ = 175 °C
精选 视频
移动应用
| 产品型号 | 供货状态 | 一般描述 | 封装 | 等级规格 | 符合RoHS级别 | 材料声明** |
|---|---|---|---|---|---|---|
| STGP10M65DF2 | 批量生产 | Trench gate field-stop IGBT M series, 650 V 10 A low loss | TO-220AB | Industrial | Ecopack2 | |
STGP10M65DF2
Package:
Trench gate field-stop IGBT M series, 650 V 10 A low lossMaterial Declaration**:
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持 。
