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This IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off between switching performance and low on-state behavior.
主要特性
- Lower on voltage drop (VCE(sat))
- Very soft ultra fast recovery antiparallel diode
- Lower CRES / CIES ratio (no cross-conduction susceptibility)
- Short-circuit withstand time 10μs
精选 视频
All tools & software
All resources
产品规格 (1)
| Resource title | Latest update | |||
|---|---|---|---|---|
| 13 Jun 2017 |
13 Jun 2017
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应用手册 (2)
| Resource title | Latest update | |||
|---|---|---|---|---|
| 03 Apr 2020 |
03 Apr 2020
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| 13 Sep 2018 |
13 Sep 2018
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用户手册 (1)
| Resource title | Latest update | |||
|---|---|---|---|---|
| 03 May 2017 |
03 May 2017
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宣传册 (2)
| Resource title | Latest update | |||
|---|---|---|---|---|
| 13 Nov 2020 |
13 Nov 2020
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| 04 May 2020 |
04 May 2020
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EDA Symbols, Footprints and 3D Models
STMicroelectronics - STGP10NC60KD
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Symbols
Footprints
3D models
质量与可靠性
| 产品型号 | Marketing Status | 一般描述 | 封装 | 等级规格 | 符合RoHS级别 | 材料声明** |
|---|---|---|---|---|---|---|
| STGP10NC60KD |
批量生产
|
10 A, 600 V short-circuit rugged IGBT in a TO-220 package | TO-220AB | 工业 | Ecopack2 |
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持 。
样片和购买
| 产品型号 | 从分销商订购 | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度（ºC） | Country of Origin | 一般描述 | Budgetary Price (US$)*/Qty | 更多信息 | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | |||||||||||||
| STGP10NC60KD | 6 distributors | Buy Direct |
批量生产
|
EAR99 | NEC | Tube | TO-220AB | -55 | 150 | CHINA | 10 A, 600 V short-circuit rugged IGBT in a TO-220 package | 0.88 / 1k | ||
