This IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off between switching performance and low on-state behavior.
- Lower on voltage drop (VCE(sat))
- Very soft ultra fast recovery antiparallel diode
- Lower CRES / CIES ratio (no cross-conduction susceptibility)
- Short-circuit withstand time 10μs
|10 A, 600 V short-circuit rugged IGBT in a TO-220 package||TO-220AB||工业||Ecopack2|
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