These devices are ultrafast IGBT. They utilize the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.
- Low on-voltage drop (VCE(sat))
- Very soft Ultrafast recovery anti-parallel diode
|型号||Marketing Status||General Description||Package||Grade||RoHS Compliance Grade||Material Declaration**|
|19 A, 600 V, very fast IGBT with Ultrafast diode||TO-220AB||工业||Ecopack2||
Package:19 A, 600 V, very fast IGBT with Ultrafast diode
19 A, 600 V, very fast IGBT with Ultrafast diode
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.