These devices are ultrafast IGBT. They utilize the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.
- Low on-voltage drop (VCE(sat))
- Very soft Ultrafast recovery anti-parallel diode
|19 A, 600 V, very fast IGBT with Ultrafast diode||TO-220AB||工业||Ecopack2||
Package:19 A, 600 V, very fast IGBT with Ultrafast diode
19 A, 600 V, very fast IGBT with Ultrafast diode
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