These devices are very fast IGBTs developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior.
- Low on voltage drop (VCE(sat))
- Low CRES / CIES ratio (no cross-conduction susceptibility)
- Short-circuit withstand time 10 μs
- IGBT co-packaged with ultrafast free-wheeling diode
|20 A, 600 V short circuit rugged IGBT||TO-220AB||工业||Ecopack2|
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.