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  • The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. A very fast soft recovery diode is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.

    主要特性

    • Maximum junction temperature : TJ = 175 °C
    • Low VCE(sat) = 1.65 V (typ.) @ IC = 20 A
    • Very fast and soft recovery co-packaged diode
    • Minimized tail current
    • Tight parameter distribution
    • Low thermal resistance
    • Positive VCE(sat) temperature coefficient

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技术文档

    • 描述 版本 文档大小 操作
      DS13338
      Trench gate field-stop, 650 V, 20 A, high-speed HB2 series IGBT in a TO‑220 package
      1.0
      311.32 KB
      PDF
      DS13338

      Trench gate field-stop, 650 V, 20 A, high-speed HB2 series IGBT in a TO‑220 package

    • 描述 版本 文档大小 操作
      AN4694
      EMC design guides for motor control applications
      1.0
      2.13 MB
      PDF
      AN4544
      IGBT datasheet tutorial
      1.1
      2.4 MB
      PDF
      AN5277
      Introduction to the new fast 650 V HB2 IGBT series on a two‑switch forward welding equipment
      1.0
      1.08 MB
      PDF
      AN4694

      EMC design guides for motor control applications

      AN4544

      IGBT datasheet tutorial

      AN5277

      Introduction to the new fast 650 V HB2 IGBT series on a two‑switch forward welding equipment

硬件型号、CAD库及SVD

    • 描述 版本 文档大小 操作
      STGP20H65DFB2 Pspice Model 1.0
      2.93 KB
      ZIP

      STGP20H65DFB2 Pspice Model

出版刊物和宣传资料

    • 描述 版本 文档大小 操作
      650 V HB2 HIGH-SPEED IGBTs with embedded protection diode 1.1
      1.31 MB
      PDF
      650V HB2 Series IGBTs Best performance in high-speed applications 1.0
      2.55 MB
      PDF
      ST IGBT FINDER app for Android and iOS 1.0
      787.04 KB
      PDF

      650 V HB2 HIGH-SPEED IGBTs with embedded protection diode

      650V HB2 Series IGBTs Best performance in high-speed applications

      ST IGBT FINDER app for Android and iOS

质量与可靠性

产品型号 Marketing Status 一般描述 封装 等级规格 符合RoHS级别 材料声明**
STGP20H65DFB2
批量生产
Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a TO-220 package TO-220AB 工业 Ecopack2

STGP20H65DFB2

Package:

Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a TO-220 package

Material Declaration**:

Marketing Status

批量生产

General Description

Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a TO-220 package

Package

TO-220AB

Grade

Industrial

(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此,它们可能不是100%适用于特定的设备。有关特定设备的信息,请联系 销售支持

样片和购买

产品型号
从分销商订购
从ST订购
供货状态
ECCN (US)
ECCN (EU)
包装类型
封装
温度(ºC) Budgetary Price (US$)*/Qty
更多信息
最小值
最大值
STGP20H65DFB2 没有经销商,请联系我们的销售办事处
批量生产
EAR99 NEC Tube TO-220AB -55 175
更多信息

Country of Origin:

CHINA

一般描述:

Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a TO-220 package

STGP20H65DFB2

供货状态

批量生产

ECCN (US)

EAR99

Budgetary Price (US$)*/Qty

ECCN (EU)

NEC

包装类型

Tube

封装

TO-220AB

Operating Temperature (°C)

(最小值)

-55

(最大值)

175

Budgetary Price (US$)* / Qty

Country of Origin

CHINA

一般描述

Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a TO-220 package

(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商