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  • This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short-circuit capability are essential. Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

    主要特性

    • 6 µs of minimum short-circuit withstand time
    • VCE(sat) = 1.55 V (typ.) @ IC = 30 A
    • Tight parameters distribution
    • Safer paralleling
    • Low thermal resistance
    • Soft and very fast recovery antiparallel diode

样片和购买

产品型号
封装
包装类型
供货状态
预算价格(US$)
数量
ECCN (US)
Country of Origin
一般描述
从分销商订购
从ST订购
STGP30M65DF2 TO-220AB Tube
批量生产
2.2 1000 EAR99 CHINA Trench gate field-stop IGBT M series, 650 V 30 A low loss 没有经销商,请联系我们的销售办事处

STGP30M65DF2

封装

TO-220AB

包装类型

Tube

单价(US$)

2.2*

供货状态

批量生产

单价(US$)

2.2

数量

1000

ECCN (US)

EAR99

Country of Origin

CHINA

一般描述

Trench gate field-stop IGBT M series, 650 V 30 A low loss

(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商

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产品型号 供货状态 一般描述 封装 等级规格 符合RoHS级别 材料声明**
STGP30M65DF2
批量生产
Trench gate field-stop IGBT M series, 650 V 30 A low loss TO-220AB 工业 Ecopack2

STGP30M65DF2

Package:

Trench gate field-stop IGBT M series, 650 V 30 A low loss

Material Declaration**:

Marketing Status

批量生产

General Description

Trench gate field-stop IGBT M series, 650 V 30 A low loss

Package

TO-220AB

Grade

Industrial

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.