This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short-circuit capability are essential. Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.
- 6 µs of minimum short-circuit withstand time
- VCE(sat) = 1.55 V (typ.) @ IC = 30 A
- Tight parameters distribution
- Safer paralleling
- Low thermal resistance
- Soft and very fast recovery antiparallel diode
|Trench gate field-stop IGBT M series, 650 V 30 A low loss||TO-220AB||工业||Ecopack2||
Package:Trench gate field-stop IGBT M series, 650 V 30 A low loss
Trench gate field-stop IGBT M series, 650 V 30 A low loss
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