6A, 600 V hyper fast IGBT with very fast diode

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  • This series of hyper fast IGBT is based on PowerMESH technology and exhibits very low turn-off energy, thanks to a new lifetime control system. This results in an optimized trade-off between on-state voltage and switching losses, allowing very high operating frequencies.

    主要特性

    • Low CRES / CIESratio (no cross-conduction susceptibility)
    • Very soft ultra fast recovery antiparallel diode

样片和购买

产品型号
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包装类型
供货状态
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一般描述
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STGPL6NC60D TO-220AB Tube
批量生产
0.52 500 EAR99 CHINA 6A, 600 V hyper fast IGBT with very fast diode 没有经销商,请联系我们的销售办事处 立即购买

STGPL6NC60D

封装

TO-220AB

包装类型

Tube

单价(US$)

0.52*

供货状态

批量生产

单价(US$)

0.52

数量

500

ECCN (US)

EAR99

Country of Origin

CHINA

一般描述

6A, 600 V hyper fast IGBT with very fast diode

(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商

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产品型号 供货状态 一般描述 封装 等级规格 符合RoHS级别 Material Declaration**
STGPL6NC60D
批量生产
6A, 600 V hyper fast IGBT with very fast diode TO-220AB 工业 Ecopack2

STGPL6NC60D

Package:

6A, 600 V hyper fast IGBT with very fast diode

Material Declaration**:

Marketing Status

批量生产

General Description

6A, 600 V hyper fast IGBT with very fast diode

Package

TO-220AB

Grade

Industrial

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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