STGSH80HB65DAG

批量生产
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Automotive-grade ACEPACK SMIT half-bridge topology 650 V, 80 A HB series IGBT with diode

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产品概述

描述

This device combines two IGBTs and diodes in half-bridge topology mounted on a very compact and rugged easily surface-mounted package. The device is part of the HB series IGBTs, which is optimized both in conduction and switching losses for soft commutation. A freewheeling diode with a low drop forward voltage is included in every switch. The result is a product specifically designed to maximize efficiency for any resonant and soft-switching applications.

  • 所有功能

    • AQG 324 qualified
    • High-speed switching series
    • Maximum junction temperature: TJ = 175 °C
    • Low VCE(sat) = 1.7 V (typ.) @ IC = 80 A
    • Minimized tail current
    • Tight parameter distribution
    • Low thermal resistance thanks to DBC substrate
    • Positive temperature VCE(sat) coefficient
    • Soft and very fast recovery antiparallel diode
    • Isolation rating of 3.4 kVrms/min

EDA符号、封装和3D模型

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质量与可靠性

产品型号 Marketing Status 一般描述 等级规格 符合RoHS级别 材料声明**
STGSH80HB65DAG
批量生产
Automotive-grade ACEPACK SMIT half-bridge topology 650 V, 80 A HB series IGBT with diode ACEPACK SMIT 汽车应用 Ecopack2

STGSH80HB65DAG

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Automotive-grade ACEPACK SMIT half-bridge topology 650 V, 80 A HB series IGBT with diode

Material Declaration**:

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Marketing Status

批量生产

General Description

Automotive-grade ACEPACK SMIT half-bridge topology 650 V, 80 A HB series IGBT with diode

Package

ACEPACK SMIT

Grade

Automotive

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样片和购买

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STGSH80HB65DAG
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STGSH80HB65DAG 批量生产

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产品型号:

STGSH80HB65DAG

一般描述:

Automotive-grade ACEPACK SMIT half-bridge topology 650 V, 80 A HB series IGBT with diode

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(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商