STGST200G65DFAG

批量生产
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Automotive-grade trench gate field-stop IGBT 650 V, 200 A in a STPAK package

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产品概述

描述

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. This device represents an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss are essential. Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

  • 所有功能

    • AEC-Q101 qualified
    • VCE(sat) = 1.52 V (typ.) @ IC = 200 A
    • Positive VCE(sat) temperature coefficient
    • Tight parameter distribution
    • Low thermal resistance
    • Very fast and soft recovery antiparallel diode

EDA符号、封装和3D模型

STMicroelectronics - STGST200G65DFAG

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质量与可靠性

产品型号 Marketing Status 一般描述 等级规格 符合RoHS级别 材料声明**
STGST200G65DFAG
批量生产
Automotive-grade trench gate field-stop IGBT 650 V, 200 A in a STPAK package STPAK 汽车应用 Ecopack2

STGST200G65DFAG

Package:

Automotive-grade trench gate field-stop IGBT 650 V, 200 A in a STPAK package

Material Declaration**:

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Marketing Status

批量生产

General Description

Automotive-grade trench gate field-stop IGBT 650 V, 200 A in a STPAK package

Package

STPAK

Grade

Automotive

(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此,它们可能不是100%适用于特定的设备。有关特定设备的信息,请联系 销售支持

样片和购买

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STGST200G65DFAG
Available at distributors

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STGST200G65DFAG 批量生产

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STGST200G65DFAG

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一般描述:

Automotive-grade trench gate field-stop IGBT 650 V, 200 A in a STPAK package

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(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商