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These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the improved H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high frequency converters. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.
主要特性
- Maximum junction temperature: TJ= 175 °C
- High speed switching series
- Minimized tail current
- VCE(sat)= 2.1 V (typ.) @ IC= 15 A
- 5 μs minimum short circuit withstand time at TJ=150 °C
- Safe paralleling
- Very fast recovery antiparallel diode
- Low thermal resistance
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