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STGW20H65FB

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650 V、20 A高速沟槽栅场截止HB系列IGBT

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产品概述

描述

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

  • 所有功能

    • Maximum junction temperature: TJ = 175 °C
    • High speed switching series
    • Minimized tail current
    • VCE(sat) = 1.55 V (typ.) @ IC = 20 A
    • Tight parameters distribution
    • Safe paralleling
    • Low thermal resistance
    阅读更多 阅读较少信息

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All resources

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Resource title
Latest update

产品规格 (1)

Resource title
Latest update
DS10546 Trench gate field-stop 650 V, 20 A high speed HB series IGBT 3.0
17 Mar 2021
17 Mar 2021
DS10546 Trench gate field-stop 650 V, 20 A high speed HB series IGBT 3.0

应用手册 (4)

Resource title
Latest update
AN4694 EMC design guides for motor control applications 1.0
19 Mar 2021
19 Mar 2021
AN4694 EMC design guides for motor control applications 1.0
AN4544 IGBT datasheet tutorial 1.1
19 Mar 2021
19 Mar 2021
AN4544 IGBT datasheet tutorial 1.1
AN5277 Introduction to the new fast 650 V HB2 IGBT series on a two‑switch forward welding equipment 1.0
30 Jan 2019
30 Jan 2019
AN5277 Introduction to the new fast 650 V HB2 IGBT series on a two‑switch forward welding equipment 1.0
AN4638 Welding machines: V and HB series IGBTs on two-switch forward converters 1.0
13 Sep 2018
13 Sep 2018
AN4638 Welding machines: V and HB series IGBTs on two-switch forward converters 1.0

宣传册 (3)

Resource title
Latest update
650V HB SERIES IGBTS:Innovative 4-lead package 1.0
30 Apr 2021
30 Apr 2021
650V HB SERIES IGBTS:Innovative 4-lead package 1.0
HB SERIES 650 V IGBTS:Trench Gate Field-stop High-speed technologies 1.0
30 Apr 2021
30 Apr 2021
HB SERIES 650 V IGBTS:Trench Gate Field-stop High-speed technologies 1.0
ST IGBT FINDER app for Android and iOS 1.0
04 May 2020
04 May 2020
ST IGBT FINDER app for Android and iOS 1.0

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STGW20H65FB

Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.

Symbols

Symbols

Footprints

Footprints

3D model

3D models

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SPICE models (1)

Resource title
Latest update
STGW20H65FB PSpice model 1.0
10 Dec 2014
10 Dec 2014
STGW20H65FB PSpice model 1.0

质量与可靠性

产品型号 Marketing Status 一般描述 封装 等级规格 符合RoHS级别 材料声明**
STGW20H65FB
批量生产
Trench gate field-stop 650 V, 20 A high speed HB series IGBT TO-247 工业 Ecopack2

STGW20H65FB

Package:

Trench gate field-stop 650 V, 20 A high speed HB series IGBT

Material Declaration**:

More Info

Marketing Status

批量生产

General Description

Trench gate field-stop 650 V, 20 A high speed HB series IGBT

Package

TO-247

Grade

Industrial

(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持 。

样片和购买

产品型号
从分销商订购
从ST订购
供货状态
ECCN (US)
ECCN (EU)
包装类型
封装
温度（ºC） Budgetary Price (US$)*/Qty
更多信息
最小值
最大值
STGW20H65FB 无法联系到经销商，请联系我们的销售办事处 Buy Direct
批量生产
EAR99 NEC Tube TO-247 -55 175 2.0 / 1k
更多信息

Country of Origin:

CHINA

一般描述:

Trench gate field-stop 650 V, 20 A high speed HB series IGBT

STGW20H65FB

供货状态

批量生产

ECCN (US)

EAR99
更多信息

Budgetary Price (US$)*/Qty

2.0 / 1k

ECCN (EU)

NEC

包装类型

Tube

封装

TO-247

Operating Temperature (°C)

(最小值)

-55

(最大值)

175

Budgetary Price (US$)* / Qty

2.0 / 1k

Country of Origin

CHINA

一般描述

Trench gate field-stop 650 V, 20 A high speed HB series IGBT

(*) 建议转售单价（美元）仅用于预算用途。如需以当地货币计价的报价，请联系您当地的 ST销售办事处 或我们的 经销商 。

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