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These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
主要特性
- Maximum junction temperature: TJ = 175 °C
- High speed switching series
- Minimized tail current
- VCE(sat) = 1.55 V (typ.) @ IC = 20 A
- Tight parameters distribution
- Safe paralleling
- Low thermal resistance
精选 视频
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产品规格 (1)
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| 20 Apr 2020 |
20 Apr 2020
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应用手册 (4)
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| 13 Sep 2018 |
13 Sep 2018
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宣传册 (3)
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| 13 Nov 2020 |
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EDA Symbols, Footprints and 3D Models
STMicroelectronics - STGW20H65FB
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Symbols
Footprints
3D models
All resources
硬件型号、CAD库及SVD (1)
| Resource title | Latest update | |||
|---|---|---|---|---|
| ZIP | 10 Dec 2014 |
10 Dec 2014
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质量与可靠性
| 产品型号 | Marketing Status | 一般描述 | 封装 | 等级规格 | 符合RoHS级别 | 材料声明** |
|---|---|---|---|---|---|---|
| STGW20H65FB |
批量生产
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Trench gate field-stop IGBT, HB series 650 V, 20 A high speed | TO-247 | 工业 | Ecopack2 |
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STGW20H65FB
Package:
Trench gate field-stop IGBT, HB series 650 V, 20 A high speedMaterial Declaration**:
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持 。
样片和购买
| 产品型号 | 从分销商订购 | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度（ºC） | Country of Origin | 一般描述 | Budgetary Price (US$)*/Qty | 更多信息 | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | |||||||||||||
| STGW20H65FB | 无法联系到经销商，请联系我们的销售办事处 | Buy Direct |
批量生产
|
EAR99 | NEC | Tube | TO-247 | -55 | 175 | CHINA | Trench gate field-stop IGBT, HB series 650 V, 20 A high speed | 2.0 / 1k | ||
