产品概述
描述
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high-switching frequency converters. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.-
所有功能
- Maximum junction temperature: TJ = 175 °C
- High speed switching series
- Minimized tail current
- VCE(sat) = 2.1 V (typ.) @ IC = 25 A
- 5 μs minimum short circuit withstand time at TJ = 150 °C
- Safe paralleling
- Low thermal resistance
- Very fast recovery antiparallel diode
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EDA符号、封装和3D模型
STMicroelectronics - STGW25H120DF2
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符号
封装
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全部资源
| Resource title | 版本 | Latest update |
|---|
SPICE models (1)
| Resource title | 版本 | Latest update | ||
|---|---|---|---|---|
| ZIP | 1.0 | 11 Dec 2020 |
11 Dec 2020
|
样片和购买
| 产品型号 | 从分销商订购 | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度（ºC） | Country of Origin | Budgetary Price (US$)*/Qty | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | |||||||||||
| STGW25H120DF2 | 2 distributors | Buy Direct |
批量生产
|
EAR99 | NEC | Tube | TO-247 | -55 | 175 | CHINA | 3.5 / 1k | |
