产品概述
描述
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high-switching frequency converters. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.-
所有功能
- Maximum junction temperature: TJ = 175 °C
- High speed switching series
- Minimized tail current
- VCE(sat) = 2.1 V (typ.) @ IC = 25 A
- 5 μs minimum short circuit withstand time at TJ = 150 °C
- Safe paralleling
- Low thermal resistance
- Very fast recovery antiparallel diode
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产品规格 (1)
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| 11 Mar 2021 |
11 Mar 2021
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应用手册 (3)
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| 13 Sep 2018 |
13 Sep 2018
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| 19 Mar 2021 |
19 Mar 2021
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宣传册 (2)
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| 03 Mar 2021 |
03 Mar 2021
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手册 (1)
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| 23 Mar 2020 |
23 Mar 2020
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EDA Symbols, Footprints and 3D Models
STMicroelectronics - STGW25H120DF2
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Symbols
Footprints
3D models
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SPICE models (1)
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| ZIP | 11 Dec 2020 |
11 Dec 2020
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样片和购买
| 产品型号 | 从分销商订购 | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度（ºC） | Country of Origin | Budgetary Price (US$)*/Qty | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | |||||||||||
| STGW25H120DF2 | 3 distributors | Free Sample Buy Direct |
批量生产
|
EAR99 | NEC | Tube | TO-247 | -55 | 175 | CHINA | 3.5 / 1k | |
