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These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.
主要特性
- Maximum junction temperature: TJ= 175 °C
- High speed switching series
- Minimized tail current
- VCE(sat)= 2.1 V (typ.) @ IC= 25 A
- 5 μs minimum short circuit withstand time at TJ=150 °C
- Safe paralleling
- Very fast recovery antiparallel diode
- Low thermal resistance
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样片和购买
| 产品型号 | 从分销商订购 | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度（ºC） | Country of Origin | Budgetary Price (US$)*/Qty | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | |||||||||||
| STGW25H120DF2 | 3 distributors | 样片和购买 立即购买 |
批量生产
|
EAR99 | NEC | Tube | TO-247 | -55 | 175 | CHINA | 3.5 / 1k | |
