STGW25H120DF2

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产品概述

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This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high-switching frequency converters. Furthermore, a slightly positive V_CE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

所有功能
Maximum junction temperature: T_J = 175 °C

High speed switching series

Minimized tail current

V_CE(sat) = 2.1 V (typ.) @ I_C = 25 A

5 μs minimum short circuit withstand time at T_J = 150 °C

Safe paralleling

Low thermal resistance

Very fast recovery antiparallel diode
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1200 V IGBT M series

Optimized for hard-switching applications up to 20 kHz

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