These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.
- Maximum junction temperature: TJ= 175 °C
- High speed switching series
- Minimized tail current
- VCE(sat)= 2.1 V (typ.) @ IC= 25 A
- 5 μs minimum short circuit withstand time at TJ=150 °C
- Tight parameters distribution
- Safe paralleling
- Low thermal resistance
RoHS Compliance Grade
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.