产品概述
描述
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.-
所有功能
- Maximum junction temperature: TJ = 175 °C
- 10 μs of short-circuit withstand time
- Low VCE(sat) = 1.85 V (typ.) @ IC = 25 A
- Tight parameter distribution
- Positive VCE(sat) temperature coefficient
- Low thermal resistance
- Soft- and fast-recovery antiparallel diode
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EDA符号、封装和3D模型
STMicroelectronics - STGW25M120DF3
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符号
封装
3D模型
全部资源
| Resource title | 版本 | Latest update |
|---|
SPICE models (1)
| Resource title | 版本 | Latest update | ||
|---|---|---|---|---|
| ZIP | 1.0 | 12 Nov 2014 |
12 Nov 2014
|
样片和购买
| 产品型号 | 从分销商订购 | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度（ºC） | Country of Origin | Budgetary Price (US$)*/Qty | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | |||||||||||
| STGW25M120DF3 | 无法联系到经销商，请联系我们的销售办事处 |
批量生产
|
EAR99 | NEC | Tube | TO-247 | -55 | 175 | CHINA | 3.6 / 1k | ||
供货状态
批量生产ECCN (US)
EAR99Budgetary Price (US$)*/Qty
3.6 / 1k