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This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.
主要特性
- Maximum junction temperature: TJ = 175 °C
- 10 μs of short-circuit withstand time
- Low VCE(sat) = 1.85 V (typ.) @ IC = 25 A
- Tight parameter distribution
- Positive VCE(sat) temperature coefficient
- Low thermal resistance
- Soft- and fast-recovery antiparallel diode
精选 视频
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产品规格 (1)
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| 20 Nov 2019 |
20 Nov 2019
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应用手册 (3)
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| 03 Apr 2020 |
03 Apr 2020
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| 13 Sep 2018 |
13 Sep 2018
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| 13 Sep 2018 |
13 Sep 2018
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宣传册 (2)
| Resource title | Latest update | |||
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| 04 May 2020 |
04 May 2020
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| 29 Nov 2019 |
29 Nov 2019
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EDA Symbols, Footprints and 3D Models
STMicroelectronics - STGW25M120DF3
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Symbols
Footprints
3D models
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硬件型号、CAD库及SVD (1)
| Resource title | Latest update | |||
|---|---|---|---|---|
| ZIP | 12 Nov 2014 |
12 Nov 2014
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样片和购买
| 产品型号 | 从分销商订购 | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度（ºC） | Country of Origin | Budgetary Price (US$)*/Qty | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | |||||||||||
| STGW25M120DF3 | 2 distributors | Free Sample Buy Direct |
批量生产
|
EAR99 | NEC | Tube | TO-247 | -55 | 175 | CHINA | 3.6 / 1k | |
