Product overview
描述
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.-
All features
- Maximum junction temperature: TJ = 175 °C
- 10 μs of short-circuit withstand time
- Low VCE(sat) = 1.85 V (typ.) @ IC = 25 A
- Tight parameter distribution
- Positive VCE(sat) temperature coefficient
- Low thermal resistance
- Soft- and fast-recovery antiparallel diode
精选 视频
All tools & software
All resources
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产品规格 (1)
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20 Nov 2019 |
20 Nov 2019
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应用手册 (3)
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03 Apr 2020 |
03 Apr 2020
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13 Sep 2018 |
13 Sep 2018
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13 Sep 2018 |
13 Sep 2018
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宣传册 (3)
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04 May 2020 |
04 May 2020
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03 Mar 2021 |
03 Mar 2021
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29 Nov 2019 |
29 Nov 2019
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EDA Symbols, Footprints and 3D Models
All resources
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硬件型号、CAD库及SVD (1)
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ZIP | 12 Nov 2014 |
12 Nov 2014
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样片和购买
产品型号 | 从分销商订购 | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度(ºC) | Country of Origin | Budgetary Price (US$)*/Qty | ||
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最小值 | 最大值 | |||||||||||
STGW25M120DF3 | 2 distributors | Free Sample Buy Direct |
批量生产
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EAR99 | NEC | Tube | TO-247 | -55 | 175 | CHINA | 3.6 / 1k |