This IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off between switching performance and low on-state behavior.
- Low on-voltage drop (VCE(sat))
- Short circuit withstand time 10 μs
- Low Cres / Cies ratio (no cross conduction susceptibility)
- IGBT co-packaged with ultra fast free-wheeling diode
|New short circuit rugged "K" series||TO-247||工业||Ecopack2||
Package:New short circuit rugged "K" series
New short circuit rugged "K" series
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