This IGBT utilizes the advanced Power MESH process resulting in an excellent trade-off between switching performance and low on-state behavior.
- High frequency operation
- Very soft ultra fast recovery antiparallel diode
- Lower CRES / CIES ratio (no cross-conduction susceptibility)
|30 A, 600 V ultra fast IGBT||TO-247||工业||Ecopack2|| |
Package:30 A, 600 V ultra fast IGBT
30 A, 600 V ultra fast IGBT
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