This ultrafast IGBT is developed using a new planar technology to yield a device with tighter switching energy variation (Eoff) versus temperature. The suffix "W" denotes a subset of products designed for high switching frequency operation (over 100 kHz).
- Improved Eoffat elevated temperature
- Low CRES / CIESratio (no cross-conduction susceptibility)
- Low VF soft recovery antiparallel diode
|35 A, 600 V ultrafast IGBT with low drop diode||TO-247||工业||Ecopack2||
Package:35 A, 600 V ultrafast IGBT with low drop diode
35 A, 600 V ultrafast IGBT with low drop diode
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