This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.
- Low CRES / CIES ratio (no cross conduction susceptibility)
- IGBT co-packaged with ultra fast free-wheeling diode
|40 A, 600 V, very fast IGBT||TO-247||工业||Ecopack2||
Package:40 A, 600 V, very fast IGBT
40 A, 600 V, very fast IGBT
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.