This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.
- Low on-voltage drop (VCE(sat))
- Low Cres/ Ciesratio (no cross conduction susceptibility)
- Short-circuit withstand time 10 μs
- IGBT co-packaged with ultra fast free-wheeling diode
|型号||Marketing Status||General Description||Package||Grade||RoHS Compliance Grade||Material Declaration**|
|40 A - 600 V - short circuit rugged IGBT||TO-247||工业||Ecopack2|
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.