产品概述
描述
This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the improved "H" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.-
所有功能
- Maximum junction temperature: TJ= 175 °C
- High speed switching series
- Minimized tail current
- VCE(sat)= 1.6 V (typ.) @ IC= 60 A
- Tight parameters distribution
- Safe paralleling
- Low thermal resistance
- Low VFsoft recovery co-packaged diode
- Lead free package
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All tools & software
EDA符号、封装和3D模型
全部资源
Resource title | 版本 | Latest update |
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SPICE models (1)
Resource title | 版本 | Latest update | ||
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ZIP | 1.0 | 11 Dec 2020 | 11 Dec 2020 |
质量与可靠性
产品型号 | Marketing Status | 一般描述 | 封装 | 等级规格 | 符合RoHS级别 | 材料声明** |
---|---|---|---|---|---|---|
STGW60H60DLFB | NRND | Trench gate field-stop IGBT, HB series 600 V, 60 A high speed | TO-247 | 工业 | Ecopack2 | |
STGW60H60DLFB
Package:
Trench gate field-stop IGBT, HB series 600 V, 60 A high speedMaterial Declaration**:
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此,它们可能不是100%适用于特定的设备。有关特定设备的信息,请联系 销售支持。
样片和购买
产品型号 | 从分销商订购 | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度(ºC) | Country of Origin | 一般描述 | Budgetary Price (US$)*/Qty | 更多信息 | ||
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最小值 | 最大值 | |||||||||||||
STGW60H60DLFB | 3 distributors | NRND | EAR99 | NEC | Tube | TO-247 | -55 | 175 | CHINA | Trench gate field-stop IGBT, HB series 600 V, 60 A high speed | |