-
This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the improved "H" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Key Features
- Maximum junction temperature: TJ= 175 °C
- High speed switching series
- Minimized tail current
- VCE(sat)= 1.6 V (typ.) @ IC= 60 A
- Tight parameters distribution
- Safe paralleling
- Low thermal resistance
- Low VFsoft recovery co-packaged diode
- Lead free package
样片和购买
| 产品型号 | 封装 | 包装类型 | 供货状态 | 预算价格(US$) | 数量 | ECCN (US) | Country of Origin | 一般描述 | 从分销商订购 | 从ST订购 |
|---|---|---|---|---|---|---|---|---|---|---|
| STGW60H60DLFB | TO-247 | Tube |
批量生产
|
3.8 | 1000 | EAR99 | CHINA | Trench gate field-stop IGBT, HB series 600 V, 60 A high speed | 查看供货情况 |
STGW60H60DLFB
封装
TO-247包装类型
Tube单价(US$)
3.8*精选 视频
开发工具硬件
| 产品型号 | 供货状态 | 一般描述 | 封装 | 等级规格 | 符合RoHS级别 | Material Declaration** |
|---|---|---|---|---|---|---|
| STGW60H60DLFB |
批量生产
|
Trench gate field-stop IGBT, HB series 600 V, 60 A high speed | TO-247 | 工业 | Ecopack2 |
|
STGW60H60DLFB
Package:
Trench gate field-stop IGBT, HB series 600 V, 60 A high speedMaterial Declaration**:
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
