Trench gate field-stop IGBT, HB series 650 V, 60 A high speed

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  • This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. A faster switching event can be achieved by the Kelvin pin, which separates power path from driving signal. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

    主要特性

    • Maximum junction temperature: TJ = 175 °C
    • Excellent switching performance thanks to the extra driving kelvin pin
    • Low VCE(sat) = 1.6 V (typ.) @ IC = 60 A
    • Minimized tail current
    • Tight parameter distribution
    • Safe paralleling
    • Low thermal resistance
    • Very fast soft recovery antiparallel diode

样片和购买

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STGW60H65DFB-4 TO247-4 Tube
Active
5.1 1000 EAR99 CHINA Trench gate field-stop IGBT, HB series 650 V, 60 A high speed 查看供货情况

Distributor availability ofSTGW60H65DFB-4

代理商名称
地区 库存 最小订购量 Third party link
Farnell Element14 EUROPE 142 1 Order Now

代理商库存报告日期: 2019-08-22

代理商名称

Farnell Element14

库存

142

Min.Order

1

地区

EUROPE Order Now

代理商库存报告日期: 2019-08-22

STGW60H65DFB-4

封装

TO247-4

包装类型

Tube

Unit Price (US$)

5.1*

Distributor availability ofSTGW60H65DFB-4

代理商名称
地区 库存 最小订购量 Third party link
Farnell Element14 EUROPE 142 1 Order Now

代理商库存报告日期: 2019-08-22

代理商名称

Farnell Element14

库存

142

Min.Order

1

地区

EUROPE Order Now

代理商库存报告日期: 2019-08-22

供货状态

Active

Unit Price (US$)

5.1

数量

1000

ECCN (US)

EAR99

Country of Origin

CHINA

描述

Trench gate field-stop IGBT, HB series 650 V, 60 A high speed

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors

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技术文档

    • 描述 版本 文档大小 操作
      DS11665
      Trench gate field-stop 650 V, 60 A high speed HB series IGBT
      3.0
      551.64 KB
      PDF
      DS11665

      Trench gate field-stop 650 V, 60 A high speed HB series IGBT

    • 描述 版本 文档大小 操作
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      Introduction to the new fast 650 V HB2 IGBT series on a two‑switch forward welding equipment
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      EMC design guides for motor control applications

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      IGBT datasheet tutorial

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      Introduction to the new fast 650 V HB2 IGBT series on a two‑switch forward welding equipment

硬件型号、CAD库及SVD

    • 描述 版本 文档大小 操作
      STGW60H65DFB-4 PSpice model 1.0
      4.5 KB
      ZIP

      STGW60H65DFB-4 PSpice model

出版刊物和宣传资料

    • 描述 版本 文档大小 操作
      650V HB series IGBTs; Innovative 4-lead package 1.0
      1.67 MB
      PDF
      HB series 650 V IGBTs; Trench Gate Field-stop High-speed technologies 1.0
      290.2 KB
      PDF
      ST IGBT Finder, get the right IGBT for your application with a touch of your screen 1.0
      357.76 KB
      PDF

      650V HB series IGBTs; Innovative 4-lead package

      HB series 650 V IGBTs; Trench Gate Field-stop High-speed technologies

      ST IGBT Finder, get the right IGBT for your application with a touch of your screen

产品型号 供货状态 描述 封装 等级规格 符合RoHS级别 材料声明**
STGW60H65DFB-4
Active
Trench gate field-stop IGBT, HB series 650 V, 60 A high speed TO247-4 工业 Ecopack2

STGW60H65DFB-4

Package:

Trench gate field-stop IGBT, HB series 650 V, 60 A high speed

Material Declaration**:

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Marketing Status

Active

General Description

Trench gate field-stop IGBT, HB series 650 V, 60 A high speed

Package

TO247-4

Grade

Industrial

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.