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  • This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. A faster switching event can be achieved by the Kelvin pin, which separates power path from driving signal. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

    主要特性

    • Maximum junction temperature: TJ = 175 °C
    • Excellent switching performance thanks to the extra driving kelvin pin
    • Low VCE(sat) = 1.6 V (typ.) @ IC = 60 A
    • Minimized tail current
    • Tight parameter distribution
    • Safe paralleling
    • Low thermal resistance
    • Very fast soft recovery antiparallel diode

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技术文档

    • 描述 版本 文档大小 操作
      DS11665
      Trench gate field-stop 650 V, 60 A high speed HB series IGBT
      3.0
      551.64 KB
      PDF
      DS11665

      Trench gate field-stop 650 V, 60 A high speed HB series IGBT

    • 描述 版本 文档大小 操作
      AN4694
      EMC design guides for motor control applications
      1.0
      2.13 MB
      PDF
      AN4544
      IGBT datasheet tutorial
      1.1
      2.4 MB
      PDF
      AN5277
      Introduction to the new fast 650 V HB2 IGBT series on a two‑switch forward welding equipment
      1.0
      1.08 MB
      PDF
      AN4694

      EMC design guides for motor control applications

      AN4544

      IGBT datasheet tutorial

      AN5277

      Introduction to the new fast 650 V HB2 IGBT series on a two‑switch forward welding equipment

硬件型号、CAD库及SVD

    • 描述 版本 文档大小 操作
      STGW60H65DFB-4 PSpice model 1.0
      4.5 KB
      ZIP

      STGW60H65DFB-4 PSpice model

出版刊物和宣传资料

    • 描述 版本 文档大小 操作
      HB series 650 V IGBTs; Trench Gate Field-stop High-speed technologies 1.0
      290.2 KB
      PDF
      ST IGBT FINDER app for Android and iOS 1.0
      787.04 KB
      PDF

      HB series 650 V IGBTs; Trench Gate Field-stop High-speed technologies

      ST IGBT FINDER app for Android and iOS

质量与可靠性

产品型号 Marketing Status 一般描述 封装 等级规格 符合RoHS级别 材料声明**
STGW60H65DFB-4
批量生产
Trench gate field-stop IGBT, HB series 650 V, 60 A high speed TO247-4 工业 Ecopack2

STGW60H65DFB-4

Package:

Trench gate field-stop IGBT, HB series 650 V, 60 A high speed

Material Declaration**:

PDF XML

Marketing Status

批量生产

General Description

Trench gate field-stop IGBT, HB series 650 V, 60 A high speed

Package

TO247-4

Grade

Industrial

(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此,它们可能不是100%适用于特定的设备。有关特定设备的信息,请联系 销售支持

样片和购买

产品型号
从分销商订购
从ST订购
封装
包装类型
供货状态
ECCN (US)
Country of Origin
一般描述
Budgetary Price (US$)*/Qty
STGW60H65DFB-4 Available at 1 distributors

...的经销商可用性STGW60H65DFB-4

代理商名称
地区 库存 最小订购量 第三方链接
Farnell Element14 EUROPE 132 1 马上订购

代理商库存报告日期: 2020-07-09

代理商名称

Farnell Element14

库存

132

Min.Order

1

地区

EUROPE 马上订购

代理商库存报告日期: 2020-07-09

TO247-4 Tube
批量生产
EAR99 CHINA Trench gate field-stop IGBT, HB series 650 V, 60 A high speed 5.1 / 1k

STGW60H65DFB-4

封装

TO247-4

包装类型

Tube

Budgetary Price (US$)*/Qty

5.1 / 1k

...的经销商可用性STGW60H65DFB-4

代理商名称
地区 库存 最小订购量 第三方链接
Farnell Element14 EUROPE 132 1 马上订购

代理商库存报告日期: 2020-07-09

代理商名称

Farnell Element14

库存

132

Min.Order

1

地区

EUROPE 马上订购

代理商库存报告日期: 2020-07-09

供货状态

批量生产

Budgetary Price (US$)* / Qty

5.1 / 1k

ECCN (US)

EAR99

Country of Origin

CHINA

一般描述

Trench gate field-stop IGBT, HB series 650 V, 60 A high speed

(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商