产品概述
描述
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. A faster switching event can be achieved by the Kelvin pin, which separates power path from driving signal. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
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所有功能
- VCE(sat) = 1.6 V (typ.) @ IC = 80 A
- Maximum junction temperature: TJ = 175 °C
- High speed switching series
- Minimized tail current
- Tight parameter distribution
- Safe paralleling
- Low thermal resistance
- Very fast soft recovery antiparallel diode
- Excellent switching performance thanks to the extra driving kelvin pin
EDA符号、封装和3D模型
STMicroelectronics - STGW80H65DFB-4
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符号
封装
3D模型
全部资源
| 资源标题 | 版本 | 更新时间 |
|---|
SPICE models (1)
| 资源标题 | 版本 | 更新时间 | ||
|---|---|---|---|---|
| ZIP | 1.0 | 23 Aug 2016 | 23 Aug 2016 |
质量与可靠性
| 产品型号 | Marketing Status | 一般描述 | 封装 | 等级规格 | 符合RoHS级别 | 材料声明** |
|---|---|---|---|---|---|---|
| STGW80H65DFB-4 | 批量生产 | Trench gate field-stop 650 V, 80 A high speed HB series IGBT | TO247-4 | 工业 | Ecopack2 | |
STGW80H65DFB-4
Package:
Trench gate field-stop 650 V, 80 A high speed HB series IGBTMaterial Declaration**:
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持。
样片和购买
| 产品型号 | Order from distributors | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度（ºC） | Country of Origin | 一般描述 | Budgetary Price (US$)*/Qty | Country of Origin | 一般描述 | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | ||||||||||||||
| STGW80H65DFB-4 | distributors 无法联系到经销商，请联系我们的销售办事处 | 批量生产 | EAR99 | NEC | Tube | TO247-4 | -55 | 175 | CHINA | Trench gate field-stop 650 V, 80 A high speed HB series IGBT | | CHINA | Trench gate field-stop 650 V, 80 A high speed HB series IGBT | ||