This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.
- Maximum junction temperature: TJ= 175 °C
- Tail-less switching off
- VCE(sat)= 1.85 V (typ.) @ IC= 80 A
- Tight parameters distribution
- Safe paralleling
- Low thermal resistance
- Very fast soft recovery antiparallel diode
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|型号||Marketing Status||General Description||Package||Grade||RoHS Compliance Grade||Material Declaration**|
|Trench gate field-stop IGBT, V series 600 V, 80 A very high speed||TO-247||工业||Ecopack2||
Package:Trench gate field-stop IGBT, V series 600 V, 80 A very high speed
Trench gate field-stop IGBT, V series 600 V, 80 A very high speed
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.