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These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.
主要特性
- 10 µs of short-circuit withstand time
- VCE(sat) = 1.85 V (typ.) @ IC = 8 A
- Tight parameter distribution
- Safer paralleling
- Low thermal resistance
- Soft and very fast recovery antiparallel diode
精选 视频
All tools & software
All resources
产品规格 (1)
| Resource title | Latest update | |||
|---|---|---|---|---|
| 25 Sep 2020 |
25 Sep 2020
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应用手册 (3)
| Resource title | Latest update | |||
|---|---|---|---|---|
| 10 Jun 2015 |
10 Jun 2015
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| 13 Sep 2018 |
13 Sep 2018
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| 07 Jan 2015 |
07 Jan 2015
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宣传册 (2)
| Resource title | Latest update | |||
|---|---|---|---|---|
| 04 May 2020 |
04 May 2020
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| 29 Nov 2019 |
29 Nov 2019
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CAD/EDA Symbols, Footprints and Models
All resources
硬件型号、CAD库及SVD (1)
| Resource title | Latest update | |||
|---|---|---|---|---|
| ZIP | 22 Nov 2016 |
22 Nov 2016
|
质量与可靠性
| 产品型号 | Marketing Status | 封装 | 等级规格 | 符合RoHS级别 | 材料声明** |
|---|---|---|---|---|---|
| STGW8M120DF3 |
批量生产
|
TO-247 | 工业 | Ecopack2 |
|
STGW8M120DF3
Package:
TO-247Material Declaration**:
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持 。
样片和购买
| 产品型号 | 从分销商订购 | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度（ºC） | Country of Origin | Budgetary Price (US$)*/Qty | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | |||||||||||
| STGW8M120DF3 | 4 distributors | Free Sample Buy Direct |
批量生产
|
EAR99 | NEC | Tube | TO-247 | -55 | 175 | CHINA | ||
