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These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.
主要特性
- 10 µs of short-circuit withstand time
- VCE(sat) = 1.85 V (typ.) @ IC = 8 A
- Tight parameter distribution
- Safer paralleling
- Low thermal resistance
- Soft and very fast recovery antiparallel diode
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开发工具硬件
| 产品型号 | 供货状态 | 封装 | 等级规格 | 符合RoHS级别 | Material Declaration** |
|---|---|---|---|---|---|
| STGW8M120DF3 | 批量生产 | TO-247 | 工业 | Ecopack2 | |
STGW8M120DF3
Package:
TO-247Material Declaration**:
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
