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This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the S series of 1200 V IGBTs which is tailored to maximize efficiency of low frequency industrial systems. Furthermore, a positive VCE(sat)temperature coefficient and tight parameter distribution result in safer paralleling operation.
主要特性
- 10 μs of short-circuit withstand time
- VCE(sat)= 1.65 V (typ.) @ IC= 40 A
- Tight parameter distribution
- Safer paralleling
- Low thermal resistance
- Soft and fast recovery antiparallel diode
精选 视频
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产品规格 (1)
| Resource title | Latest update | |||
|---|---|---|---|---|
| 18 Dec 2014 |
18 Dec 2014
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应用手册 (3)
| Resource title | Latest update | |||
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| 03 Apr 2020 |
03 Apr 2020
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| 13 Sep 2018 |
13 Sep 2018
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| 13 Sep 2018 |
13 Sep 2018
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宣传册 (1)
| Resource title | Latest update | |||
|---|---|---|---|---|
| 04 May 2020 |
04 May 2020
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EDA Symbols, Footprints and 3D Models
STMicroelectronics - STGWA40S120DF3
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Symbols
Footprints
3D models
质量与可靠性
| 产品型号 | Marketing Status | 封装 | 等级规格 | 符合RoHS级别 | 材料声明** |
|---|---|---|---|---|---|
| STGWA40S120DF3 |
批量生产
|
TO-247 long leads | 工业 | Ecopack2 |
|
STGWA40S120DF3
Package:
TO-247 long leadsMaterial Declaration**:
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持 。
样片和购买
| 产品型号 | 从分销商订购 | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度（ºC） | Country of Origin | Budgetary Price (US$)*/Qty | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | |||||||||||
| STGWA40S120DF3 | 4 distributors | Free Sample Buy Direct |
批量生产
|
EAR99 | NEC | Tube | TO-247 long leads | -55 | 175 | CHINA | 4.82 / 1k | |
