产品概述
描述
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the S series of 1200 V IGBTs which is tailored to maximize efficiency of low frequency industrial systems. Furthermore, a positive VCE(sat)temperature coefficient and tight parameter distribution result in safer paralleling operation.-
所有功能
- 10 μs of short-circuit withstand time
- VCE(sat)= 1.65 V (typ.) @ IC= 40 A
- Tight parameter distribution
- Safer paralleling
- Low thermal resistance
- Soft and fast recovery antiparallel diode
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EDA符号、封装和3D模型
STMicroelectronics - STGWA40S120DF3
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符号
封装
3D模型
全部资源
| Resource title | 版本 | Latest update |
|---|
SPICE models (1)
| Resource title | 版本 | Latest update | ||
|---|---|---|---|---|
| ZIP | 1.0 | 08 Jun 2015 |
08 Jun 2015
|
样片和购买
| 产品型号 | 从分销商订购 | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度（ºC） | Country of Origin | Budgetary Price (US$)*/Qty | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | |||||||||||
| STGWA40S120DF3 | 1 distributors |
批量生产
|
EAR99 | NEC | Tube | TO-247 long leads | -55 | 175 | CHINA | 4.82 / 1k | ||
供货状态
批量生产ECCN (US)
EAR99Budgetary Price (US$)*/Qty
4.82 / 1k