The newest IGBT 650 V soft-switching IH series has been developed using an advanced proprietary trench gate field-stop structure, whose performance is optimized both in conduction and switching losses for soft-commutation. A freewheeling diode with a low drop forward voltage is included. The result is a product specifically designed to maximize efficiency for any resonant and soft-switching applications.
- Designed for soft-commutation only
- Maximum junction temperature: TJ = 175 °C
- VCE(sat) = 1.5 V (typ.) @ IC = 50 A
- Minimized tail current
- Tight parameter distribution
- Low thermal resistance
- Low voltage drop freewheeling co-packaged diode
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|型号||Marketing Status||General Description||Package||Grade||RoHS Compliance Grade||Material Declaration**|
|Trench gate field-stop IGBT, 650 V, 50 A soft switching IH series in a TO-247 long leads package||TO-247 long leads||工业||Ecopack2||
Package:Trench gate field-stop IGBT, 650 V, 50 A soft switching IH series in a TO-247 long leads package
Trench gate field-stop IGBT, 650 V, 50 A soft switching IH series in a TO-247 long leads package
TO-247 long leads
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.