STGWA60V60DWFAG

批量生产
Design Win

Automotive-grade trench field-stop 600 V, 60 A very high speed V series IGBT featuring free-wheeling SiC diode

下载数据手册

产品概述

描述

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, the positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Co-packed with the IGBT a silicon carbide diode has been adopted: no recovery is shown at turn-off of the SiC diode and the already minimal capacitive turn-off behavior is independent of temperature. Its high forward surge capability ensures good robustness during transient phases.

  • 所有功能

    • AEC-Q101 qualified
    • Maximum junction temperature: TJ = 175 °C
    • VCE(sat) = 1.85 V (typ.) @ IC = 60 A
    • Tail-less switching current
    • Tight parameter distribution
    • Low thermal resistance
    • Positive VCE(sat) temperature coefficient
    • Silicon carbide diode with no-reverse recovery charge is co-packaged in freewheeling configuration

EDA符号、封装和3D模型

STMicroelectronics - STGWA60V60DWFAG

Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.

Please select one model supplier :

Symbols

符号

Footprints

封装

3D model

3D模型

质量与可靠性

产品型号 Marketing Status 一般描述 等级规格 符合RoHS级别 材料声明**
STGWA60V60DWFAG
批量生产
Automotive-grade trench field-stop 600 V, 60 A very high speed V series IGBT featuring free-wheeling SiC diode TO-247 long leads 汽车应用 Ecopack2

STGWA60V60DWFAG

Package:

Automotive-grade trench field-stop 600 V, 60 A very high speed V series IGBT featuring free-wheeling SiC diode

Material Declaration**:

PDF XML

Marketing Status

批量生产

General Description

Automotive-grade trench field-stop 600 V, 60 A very high speed V series IGBT featuring free-wheeling SiC diode

Package

TO-247 long leads

Grade

Automotive

(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此,它们可能不是100%适用于特定的设备。有关特定设备的信息,请联系 销售支持

样片和购买

Swipe or click the button to explore more details Don't show this again
产品型号
供货状态
Budgetary Price (US$)*/Qty
从ST订购
Order from distributors
包装类型
RoHS
Country of Origin
ECCN (US)
ECCN (EU)
温度(ºC)
一般描述
最小值
最大值
STGWA60V60DWFAG
Available at distributors

经销商的可用性 STGWA60V60DWFAG

代理商名称
地区 库存 最小订购量 第三方链接

代理商库存报告日期:

无法联系到经销商,请联系我们的销售办事处

STGWA60V60DWFAG 批量生产

Budgetary Price (US$)*/Qty:
-
包:
包装类型:
RoHS:
Country of Origin:
ECCN (US):
ECCN (EU):

产品型号:

STGWA60V60DWFAG

Operating Temperature (°C)

Min:

Max:

一般描述:

Automotive-grade trench field-stop 600 V, 60 A very high speed V series IGBT featuring free-wheeling SiC diode

Swipe or click the button to explore more details Don't show this again

(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商