-
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, the positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Co-packed with the IGBT a silicon carbide diode has been adopted: no recovery is shown at turn-off of the SiC diode and the already minimal capacitive turn-off behavior is independent of temperature. Its high forward surge capability ensures good robustness during transient phases.
主要特性
- AEC-Q101 qualified
- Maximum junction temperature: TJ = 175 °C
- VCE(sat) = 1.85 V (typ.) @ IC = 60 A
- Tail-less switching current
- Tight parameter distribution
- Low thermal resistance
- Positive VCE(sat) temperature coefficient
- Silicon carbide diode with no-reverse recovery charge is co-packaged in freewheeling configuration
精选 视频
移动应用
质量与可靠性
| 产品型号 | Marketing Status | 一般描述 | 封装 | 等级规格 | 符合RoHS级别 | 材料声明** |
|---|---|---|---|---|---|---|
| STGWA60V60DWFAG |
批量生产
|
Automotive-grade trench field-stop 600 V, 60 A very high speed V series IGBT featuring free-wheeling SiC diode | TO-247 long leads | 汽车应用 | Ecopack2 |
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持 。
样片和购买
| 产品型号 | 从分销商订购 | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度（ºC） | Country of Origin | 一般描述 | Budgetary Price (US$)*/Qty | 更多信息 | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | |||||||||||||
| STGWA60V60DWFAG | 2 distributors | 样片和购买 立即购买 |
批量生产
|
EAR99 | NEC | Tube | TO-247 long leads | -55 | 175 | CHINA | Automotive-grade trench field-stop 600 V, 60 A very high speed V series IGBT featuring free-wheeling SiC diode | |||
