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  • This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive VCE(sat)temperature coefficient and very tight parameter distribution result in easier paralleling operation.

    主要特性

    • High speed switching
    • Tight parameters distribution
    • Safe paralleling
    • Low thermal resistance
    • Short-circuit rated
    • Ultrafast soft recovery antiparallel diode

样片和购买

产品型号
封装
包装类型
供货状态
预算价格(US$)
数量
ECCN (US)
Country of Origin
描述
从分销商订购
从ST订购
STGWT20H60DF TO-3P Tube
Active
1.6 1000 EAR99 KOREA (south) 600 V, 20 A high speed trench gate field-stop IGBT No availability of distributors reported, please contact our sales office

STGWT20H60DF

封装

TO-3P

包装类型

Tube

Unit Price (US$)

1.6*

供货状态

Active

Unit Price (US$)

1.6

数量

1000

ECCN (US)

EAR99

Country of Origin

KOREA (south)

描述

600 V, 20 A high speed trench gate field-stop IGBT

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors

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产品型号 供货状态 描述 封装 等级规格 符合RoHS级别 材料声明**
STGWT20H60DF
Active
600 V, 20 A high speed trench gate field-stop IGBT TO-3P 工业 Ecopack1

STGWT20H60DF

Package:

600 V, 20 A high speed trench gate field-stop IGBT

Material Declaration**:

Marketing Status

Active

General Description

600 V, 20 A high speed trench gate field-stop IGBT

Package

TO-3P

Grade

Industrial

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.