This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
- Maximum junction temperature: TJ = 175 °C
- Minimized tail current
- VCE(sat) = 1.55 V (typ.) @ IC = 20 A
- Tight parameter distribution
- Co-packed diode for protection
- Safe paralleling
- Low thermal resistance
|Trench gate field-stop IGBT, HB series 650 V, 20 A high speed||TO-3P||工业||Ecopack1||
Package:Trench gate field-stop IGBT, HB series 650 V, 20 A high speed
Trench gate field-stop IGBT, HB series 650 V, 20 A high speed
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