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  • This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

    主要特性

    • Maximum junction temperature: TJ = 175 °C
    • High speed switching series
    • Minimized tail current
    • Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A
    • Tight parameter distribution
    • Safe paralleling
    • Positive VCE(sat) temperature coefficient
    • Low thermal resistance
    • Very fast soft recovery antiparallel diode

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技术文档

    • 描述 版本 文档大小 操作
      DS11375
      Trench gate field-stop 650 V, 30 A high speed HB series IGBT
      3.0
      537.07 KB
      PDF
      DS11375

      Trench gate field-stop 650 V, 30 A high speed HB series IGBT

    • 描述 版本 文档大小 操作
      AN4694
      EMC design guides for motor control applications
      1.0
      2.13 MB
      PDF
      AN4544
      IGBT datasheet tutorial
      1.1
      2.4 MB
      PDF
      AN5277
      Introduction to the new fast 650 V HB2 IGBT series on a two‑switch forward welding equipment
      1.0
      1.08 MB
      PDF
      AN4694

      EMC design guides for motor control applications

      AN4544

      IGBT datasheet tutorial

      AN5277

      Introduction to the new fast 650 V HB2 IGBT series on a two‑switch forward welding equipment

出版刊物和宣传资料

    • 描述 版本 文档大小 操作
      HB series 650 V IGBTs; Trench Gate Field-stop High-speed technologies 1.0
      290.2 KB
      PDF
      ST IGBT FINDER app for Android and iOS 1.0
      787.04 KB
      PDF

      HB series 650 V IGBTs; Trench Gate Field-stop High-speed technologies

      ST IGBT FINDER app for Android and iOS

质量与可靠性

产品型号 Marketing Status 一般描述 封装 等级规格 符合RoHS级别 材料声明**
STGWT30HP65FB
批量生产
Trench gate field-stop 650 V, 30 A high speed HB series IGBT TO-3P 工业 Ecopack2

STGWT30HP65FB

Package:

Trench gate field-stop 650 V, 30 A high speed HB series IGBT

Material Declaration**:

Marketing Status

批量生产

General Description

Trench gate field-stop 650 V, 30 A high speed HB series IGBT

Package

TO-3P

Grade

Industrial

(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此,它们可能不是100%适用于特定的设备。有关特定设备的信息,请联系 销售支持

样片和购买

产品型号
从分销商订购
从ST订购
封装
包装类型
供货状态
ECCN (US)
Country of Origin
一般描述
Budgetary Price (US$)*/Qty
STGWT30HP65FB 没有经销商,请联系我们的销售办事处 TO-3P Tube
批量生产
EAR99 SOUTH KOREA Trench gate field-stop 650 V, 30 A high speed HB series IGBT

STGWT30HP65FB

封装

TO-3P

包装类型

Tube

Budgetary Price (US$)*/Qty

供货状态

批量生产

Budgetary Price (US$)* / Qty

ECCN (US)

EAR99

Country of Origin

SOUTH KOREA

一般描述

Trench gate field-stop 650 V, 30 A high speed HB series IGBT

(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商