This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the improved "H" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.
- Maximum junction temperature: TJ= 175 °C
- High speed switching series
- Minimized tail current
- VCE(sat)= 1.6 V (typ.) @ IC= 60 A
- Tight parameters distribution
- Safe paralleling
- Low thermal resistance
- Low VFsoft recovery co-packaged diode
- Lead free package
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|型号||Marketing Status||General Description||Package||Grade||RoHS Compliance Grade||Material Declaration**|
|Trench gate field-stop IGBT, HB series 600 V, 60 A high speed||TO-3P||工业||Ecopack1||
Package:Trench gate field-stop IGBT, HB series 600 V, 60 A high speed
Trench gate field-stop IGBT, HB series 600 V, 60 A high speed
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.