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This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.
主要特性
- Maximum junction temperature: TJ= 175 °C
- Tail-less switching off
- VCE(sat)= 1.85 V (typ.) @ IC= 80 A
- Tight parameters distribution
- Safe paralleling
- Low thermal resistance
- Very fast soft recovery antiparallel diode
样片和购买
| 产品型号 | 封装 | 包装类型 | 供货状态 | ECCN (US) | Country of Origin | 一般描述 | Approximate Price (US$)* / Qty | 从ST订购 | 从分销商订购 |
|---|---|---|---|---|---|---|---|---|---|
| STGWT80V60DF | TO-3P | Tube | 批量生产 | EAR99 | KOREA (south) | Trench gate field-stop IGBT, V series 600 V, 80 A very high speed | 6.78 / 1k | 查看供货情况 |
STGWT80V60DF
封装
TO-3P包装类型
TubeApproximate Price (US$)* / Qty
6.78 / 1k精选 视频
移动应用
| 产品型号 | 供货状态 | 一般描述 | 封装 | 等级规格 | 符合RoHS级别 | 材料声明** |
|---|---|---|---|---|---|---|
| STGWT80V60DF | 批量生产 | Trench gate field-stop IGBT, V series 600 V, 80 A very high speed | TO-3P | Industrial | Ecopack2 | |
STGWT80V60DF
Package:
Trench gate field-stop IGBT, V series 600 V, 80 A very high speedMaterial Declaration**:
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持 。
