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This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.
主要特性
- Maximum junction temperature: TJ= 175 °C
- Tail-less switching off
- VCE(sat)= 1.85 V (typ.) @ IC= 80 A
- Tight parameters distribution
- Safe paralleling
- Low thermal resistance
- Very fast soft recovery antiparallel diode
样片和购买
| 产品型号 | 封装 | 包装类型 | 供货状态 | 预算价格(US$) | 数量 | ECCN (US) | Country of Origin | 一般描述 | 从分销商订购 | 从ST订购 |
|---|---|---|---|---|---|---|---|---|---|---|
| STGWT80V60DF | TO-3P | Tube | 批量生产 | 5.05 | 1000 | EAR99 | KOREA (south) | Trench gate field-stop IGBT, V series 600 V, 80 A very high speed | 查看供货情况 |
STGWT80V60DF
封装
TO-3P包装类型
Tube单价(US$)
5.05*精选 视频
开发工具硬件
| 产品型号 | 供货状态 | 一般描述 | 封装 | 等级规格 | 符合RoHS级别 | Material Declaration** |
|---|---|---|---|---|---|---|
| STGWT80V60DF | 批量生产 | Trench gate field-stop IGBT, V series 600 V, 80 A very high speed | TO-3P | 工业 | Ecopack1 | |
STGWT80V60DF
Package:
Trench gate field-stop IGBT, V series 600 V, 80 A very high speedMaterial Declaration**:
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
