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  • This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.

    主要特性

    • Maximum junction temperature: TJ= 175 °C
    • Tail-less switching off
    • VCE(sat)= 1.85 V (typ.) @ IC= 80 A
    • Tight parameters distribution
    • Safe paralleling
    • Low thermal resistance

样片和购买

产品型号
封装
包装类型
供货状态
预算价格(US$)
数量
ECCN (US)
Country of Origin
描述
从分销商订购
从ST订购
STGWT80V60F TO-3P Tube
Active
4.8 1000 EAR99 KOREA (south) Trench gate field-stop IGBT, V series 600 V, 80 A very high speed No availability of distributors reported, please contact our sales office 立即购买

STGWT80V60F

封装

TO-3P

包装类型

Tube

Unit Price (US$)

4.8*

供货状态

Active

Unit Price (US$)

4.8

数量

1000

ECCN (US)

EAR99

Country of Origin

KOREA (south)

描述

Trench gate field-stop IGBT, V series 600 V, 80 A very high speed

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors

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硬件型号、CAD库及SVD

    • 描述 版本 文档大小 操作
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产品型号 供货状态 描述 封装 等级规格 符合RoHS级别 材料声明**
STGWT80V60F
Active
Trench gate field-stop IGBT, V series 600 V, 80 A very high speed TO-3P 工业 Ecopack1

STGWT80V60F

Package:

Trench gate field-stop IGBT, V series 600 V, 80 A very high speed

Material Declaration**:

Marketing Status

Active

General Description

Trench gate field-stop IGBT, V series 600 V, 80 A very high speed

Package

TO-3P

Grade

Industrial

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.