N-channel 100 V, 7.8 mOhm typ., 120 A STripFET(TM) Power MOSFET in H2PAK-2 package

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  • These devices are N-channel enhancement mode Power MOSFETs produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize on-resistance and gate charge to provide superior switching performance.

    主要特性

    • Ultra low on-resistance
    • 100% avalanche tested

样片和购买

产品型号
封装
包装类型
供货状态
预算价格(US$)
数量
ECCN (US)
Country of Origin
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STH130N10F3-2 H2PAK-2 Tape And Reel
Active
1.4 1000 EAR99 CHINA No availability of distributors reported, please contact our sales office 立即购买

STH130N10F3-2

封装

H2PAK-2

包装类型

Tape And Reel

Unit Price (US$)

1.4*

供货状态

Active

Unit Price (US$)

1.4

数量

1000

ECCN (US)

EAR99

Country of Origin

CHINA

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors

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      N-channel 100 V, 7.8 mΩ typ., 120 A STripFET™III Power MOSFET in TO-220FP, I²PAKFP, H²PAK-2 and TO-220 packages

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产品型号 供货状态 封装 等级规格 符合RoHS级别 材料声明**
STH130N10F3-2
Active
H2PAK-2 工业 Ecopack1

STH130N10F3-2

Package:

H2PAK-2

Material Declaration**:

PDF XML

Marketing Status

Active

Package

H2PAK-2

Grade

Industrial

RoHS Compliance Grade

Ecopack1

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.