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These devices are N-channel Power MOSFETs developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFETs exhibit very low RDS(on)in all packages.
主要特性
- Designed for automotive applications and AEC-Q101 qualified
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
精选 视频
Learn how ST’s low-voltage power MOSFETs can help you to solve your EMI/EMC issues in motor control applications
移动应用
质量与可靠性
| 产品型号 | Marketing Status | 封装 | 等级规格 | 符合RoHS级别 | 材料声明** |
|---|---|---|---|---|---|
| STH175N4F6-2AG | NRND | H2PAK-2 | 汽车应用 | Ecopack1 | |
STH175N4F6-2AG
Package:
H2PAK-2Material Declaration**:
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持 。
样片和购买
| 产品型号 | 从分销商订购 | 从ST订购 | 封装 | 包装类型 | 供货状态 | ECCN (US) | Country of Origin | Budgetary Price (US$)*/Qty | |
|---|---|---|---|---|---|---|---|---|---|
| STH175N4F6-2AG | 1 distributors | H2PAK-2 | Tape And Reel | NRND | EAR99 | CHINA |
STH175N4F6-2AG
封装
H2PAK-2包装类型
Tape And ReelBudgetary Price (US$)*/Qty
