STH185N10F3-2

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汽车级N沟道100 V、3.9 mOhm典型值、180 A STripFET F3功率MOSFET,H2PAK-2封装

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This device is an N-channel Power MOSFET developed using STripFET™ F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance.

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STMicroelectronics - STH185N10F3-2

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