产品概述
描述
This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
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所有功能
- AEC-Q101 qualified
- Industry’s lowest RDS(on) x area
- Industry’s best FoM (figure of merit)
- Ultra-low gate charge
- 100% avalanche tested
特别推荐
EDA符号、封装和3D模型
STMicroelectronics - STH2N120K5-2AG
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
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符号
封装
3D模型
样片和购买
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| 产品型号 | Order from distributors | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度（ºC） | Country of Origin | Budgetary Price (US$)*/Qty | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | |||||||||||
| STH2N120K5-2AG | distributors 无法联系到经销商，请联系我们的销售办事处 | 批量生产 | EAR99 | NEC | Tape and Reel | H2PAK-2 | - | - | CHINA | | ||
distributors
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