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STH315N10F7-2

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储存到myST

Automotive-grade N-channel 100 V, 2.1 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-2 package

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样片和购买
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解决方案
质量与可靠性
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快速链接

  • 该N-沟道功率MOSFETs利用STripFET™F7技术和增强型沟槽栅极结构，可降低通态电阻，同时降低内部电容和栅极电荷，从而使开关速度更快、能效更高。

    主要特性

    • 专为汽车应用设计并通过AEC-Q101认证
    • 处于市面上最低的RDS(on)行列
    • 出色的品质因数（FoM）
    • 较低的 Crss/Ciss比值使得其具有更强的抗EMI能力
    • 坚固的抗雪崩能力
    阅读更多 阅读较少信息

样片和购买

产品型号
封装
包装类型
供货状态
预算价格(US$)
数量
ECCN (US)
Country of Origin
从分销商订购
从ST订购
STH315N10F7-2 H2PAK-2 Tape And Reel
Active
3.8 1000 EAR99 CHINA 查看供货情况

Distributor availability ofSTH315N10F7-2

代理商名称
地区 库存 最小订购量 Third party link
ARROW EUROPE 1000 0 Order Now
MOUSER WORLDWIDE 833 1 Order Now
RUTRONIK EUROPE 3015 1000 Order Now

代理商库存报告日期: 2019-09-16

代理商名称

ARROW

库存

1000

Min.Order

0

地区

EUROPE Order Now

MOUSER

库存

833

Min.Order

1

地区

WORLDWIDE Order Now

RUTRONIK

库存

3015

Min.Order

1000

地区

EUROPE Order Now

代理商库存报告日期: 2019-09-16

Get sample

STH315N10F7-2

封装

H2PAK-2

包装类型

Tape And Reel
More Info

Unit Price (US$)

3.8*

Distributor availability ofSTH315N10F7-2

代理商名称
地区 库存 最小订购量 Third party link
ARROW EUROPE 1000 0 Order Now
MOUSER WORLDWIDE 833 1 Order Now
RUTRONIK EUROPE 3015 1000 Order Now

代理商库存报告日期: 2019-09-16

代理商名称

ARROW

库存

1000

Min.Order

0

地区

EUROPE Order Now

MOUSER

库存

833

Min.Order

1

地区

WORLDWIDE Order Now

RUTRONIK

库存

3015

Min.Order

1000

地区

EUROPE Order Now

代理商库存报告日期: 2019-09-16

供货状态

Active

Unit Price (US$)

3.8

数量

1000

ECCN (US)

EAR99

Country of Origin

CHINA

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors

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技术文档

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      		DS9870
      Automotive-grade N-channel 100 V, 2.1 mΩ typ., 180 A STripFET™ F7 Power MOSFETs       		4.0
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    • 描述 版本 文档大小 操作
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      		AN4337
      The avalanche issue: comparing the impacts of the IAR and EAS parameters       		1.1
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      Impact of power MOSFET VGS on buck converter performance

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      AN4789

      Monolithic Schottky diode in ST F7 LV MOSFET technology: improving application performance

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      AN4390

      ST’s MOSFET technologies for uninterruptible power supplies

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      The avalanche issue: comparing the impacts of the IAR and EAS parameters

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      Spice model tutorial for Power MOSFETs

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硬件型号、CAD库及SVD

    • 描述 版本 文档大小 操作
      		STH315N10F7-2 PSpice model 1.0
      9.64 KB
      		ZIP

      STH315N10F7-2 PSpice model

      ZIP

出版刊物和宣传资料

    • 描述 版本 文档大小 操作
      		AEC-Q101 STripFET F7 MOSFETs for Automotive 1.0
      776.14 KB
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      Electric vehicle (EV) ecosystem

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产品型号 供货状态 封装 等级规格 符合RoHS级别 材料声明**
STH315N10F7-2
Active
H2PAK-2 汽车 Ecopack1

STH315N10F7-2

Package:

H2PAK-2

Material Declaration**:

More Info

Marketing Status

Active

Package

H2PAK-2

Grade

Automotive

RoHS Compliance Grade

Ecopack1

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.