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该N-沟道功率MOSFETs利用STripFET™F7技术和增强型沟槽栅极结构,可降低通态电阻,同时降低内部电容和栅极电荷,从而使开关速度更快、能效更高。
主要特性
- 专为汽车应用设计并通过AEC-Q101认证
- 处于市面上最低的RDS(on)行列
- 出色的品质因数(FoM)
- 较低的 Crss/Ciss比值使得其具有更强的抗EMI能力
- 坚固的抗雪崩能力
精选 视频
Learn how ST’s low-voltage power MOSFETs can help you to solve your EMI/EMC issues in motor control applications
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产品型号 | 供货状态 | 封装 | 等级规格 | 符合RoHS级别 | Material Declaration** |
---|---|---|---|---|---|
STH315N10F7-2 | 批量生产 | H2PAK-2 | 汽车 | Ecopack1 | |
STH315N10F7-2
Package:
H2PAK-2Material Declaration**:
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.