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STH320N4F6-2

NRND
储存到myST

N-channel 40 V, 1.1 mOhm typ., 200 A STripFET F6 Power MOSFET in H2PAK-2 package

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快速链接

  • These devices are N-channel Power MOSFETs developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFETs exhibit very low RDS(on) in all packages.

    主要特性

    • AEC-Q101 qualified
    • Very low on-resistance
    • Very low gate charge
    • High avalanche ruggedness
    • Low gate drive power loss
    阅读更多 阅读较少信息

样片和购买

产品型号
封装
包装类型
供货状态
预算价格(US$)
数量
ECCN (US)
Country of Origin
从分销商订购
从ST订购
STH320N4F6-2 H2PAK-2 Tape And Reel
NRND
- EAR99 - 查看供货情况

Distributor availability ofSTH320N4F6-2

代理商名称
地区 库存 最小订购量 Third party link
RS COMPONENTS EUROPE 755 1 Order Now

代理商库存报告日期: 2019-09-09

代理商名称

RS COMPONENTS

库存

755

Min.Order

1

地区

EUROPE Order Now

代理商库存报告日期: 2019-09-09

立即购买

STH320N4F6-2

封装

H2PAK-2

包装类型

Tape And Reel
More Info

Unit Price (US$)

*

Distributor availability ofSTH320N4F6-2

代理商名称
地区 库存 最小订购量 Third party link
RS COMPONENTS EUROPE 755 1 Order Now

代理商库存报告日期: 2019-09-09

代理商名称

RS COMPONENTS

库存

755

Min.Order

1

地区

EUROPE Order Now

代理商库存报告日期: 2019-09-09

供货状态

NRND

Unit Price (US$)

-

数量

-

ECCN (US)

EAR99

Country of Origin

-

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors

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开发工具硬件

    • 产品型号
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      MOSFET product finder application for Android and iOS

00 选择要下载的文档

技术文档

    • 描述 版本 文档大小 操作
      		DS9472
      Automotive-grade N-channel 40 V, 1.1 mΩ typ., 200 A STripFET™ F6 Power MOSFETs in H²PAK-2 and H²PAK-6       		3.0
      882.91 KB
      		PDF
      DS9472

      Automotive-grade N-channel 40 V, 1.1 mΩ typ., 200 A STripFET™ F6 Power MOSFETs in H²PAK-2 and H²PAK-6

      PDF
    • 描述 版本 文档大小 操作
      		AN3267
      Impact of power MOSFET VGS on buck converter performance       		1.2
      1.13 MB
      		PDF
      		AN4191
      Power MOSFET: Rg impact on applications       		1.2
      1.45 MB
      		PDF
      		AN4390
      ST’s MOSFET technologies for uninterruptible power supplies       		1.1
      1.22 MB
      		PDF
      		AN4337
      The avalanche issue: comparing the impacts of the IAR and EAS parameters       		1.1
      347.01 KB
      		PDF
      AN3267

      Impact of power MOSFET VGS on buck converter performance

      PDF
      AN4191

      Power MOSFET: Rg impact on applications

      PDF
      AN4390

      ST’s MOSFET technologies for uninterruptible power supplies

      PDF
      AN4337

      The avalanche issue: comparing the impacts of the IAR and EAS parameters

      PDF
    • 描述 版本 文档大小 操作
      		UM1575
      Spice model tutorial for Power MOSFETs       		1.3
      1.51 MB
      		PDF
      UM1575

      Spice model tutorial for Power MOSFETs

      PDF

硬件型号、CAD库及SVD

    • 描述 版本 文档大小 操作
      		STH320N4F6-2 PSpice model 2.0
      10.21 KB
      		ZIP

      STH320N4F6-2 PSpice model

      ZIP

出版刊物和宣传资料

    • 描述 版本 文档大小 操作
      		AEC-Q101 STripFET F7 MOSFETs for Automotive 1.0
      776.14 KB
      		PDF
      		STPOWER™ STripFET F7 MOSFET for Industrial applications 1.0
      1.15 MB
      		PDF

      AEC-Q101 STripFET F7 MOSFETs for Automotive

      PDF

      STPOWER™ STripFET F7 MOSFET for Industrial applications

      PDF
产品型号 供货状态 封装 等级规格 符合RoHS级别 材料声明**
STH320N4F6-2
NRND
H2PAK-2 汽车 Ecopack1

STH320N4F6-2

Package:

H2PAK-2

Material Declaration**:

PDF XML
More Info

Marketing Status

NRND

Package

H2PAK-2

Grade

Automotive

RoHS Compliance Grade

Ecopack1

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.