产品概述
描述
These devices are N-channel Power MOSFETs developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFETs exhibit very low RDS(on) in all packages.-
所有功能
- AEC-Q101 qualified
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
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产品规格 (1)
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29 May 2017 | 29 May 2017 |
应用手册 (4)
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13 Sep 2018 | 13 Sep 2018 | |||
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17 Mar 2021 | 17 Mar 2021 | |||
13 Sep 2018 | 13 Sep 2018 |
用户手册 (1)
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21 Oct 2016 | 21 Oct 2016 |
宣传册 (5)
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22 Feb 2021 | 22 Feb 2021 | |||
26 Mar 2021 | 26 Mar 2021 | |||
25 Sep 2019 | 25 Sep 2019 | |||
08 May 2020 | 08 May 2020 | |||
13 Jun 2019 | 13 Jun 2019 |
EDA Symbols, Footprints and 3D Models
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SPICE models (1)
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ZIP | 26 Jan 2015 | 26 Jan 2015 |
样片和购买
产品型号 | 从分销商订购 | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度(ºC) | Country of Origin | Budgetary Price (US$)*/Qty | ||
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STH320N4F6-2 | 无法联系到经销商,请联系我们的销售办事处 | Buy Direct | NRND | EAR99 | NEC | Tape And Reel | H2PAK-2 | - | - | CHINA |