产品概述
描述
These Power MOSFETs are designed using the STMicroelectronics consolidated strip-layout-based MESH OVERLAY process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers.-
所有功能
- 100% avalanche tested
- Intrinsic capacitances and Qg minimized
- High speed switching
- Fully isolated TO-3PF plastic package, creepage distance path is 5.4 mm (typ.)
精选 视频
特别推荐
All tools & software
EDA符号、封装和3D模型
样片和购买
产品型号 | 从分销商订购 | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度(ºC) | Country of Origin | Budgetary Price (US$)*/Qty | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|
最小值 | 最大值 | |||||||||||
STH3N150-2 | 无法联系到经销商,请联系我们的销售办事处 | 批量生产 | EAR99 | NEC | Tape And Reel | H2PAK-2 | - | - | CHINA | |