STH60N099DM9-2AG

批量生产
Design Win

Automotive-grade N-channel 600 V, 76 mOhm typ., 27 A MDmesh DM9 Power MOSFET in an H2PAK-2 package

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产品概述

描述

This N-channel Power MOSFET is based on the most innovative super-junction MDmesh DM9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area coupled with a fast-recovery diode. The silicon-based DM9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. The fast-recovery diode featuring very low recovery charge (Qrr), time (trr) and RDS(on) makes this fast-switching super-junction Power MOSFET tailored for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

  • 所有功能

    • AEC-Q101 qualified
    • Fast-recovery body diode
    • Worldwide best RDS(on) per area among silicon-based fast recovery devices
    • Low gate charge, input capacitance and resistance
    • 100% avalanche tested
    • Extremely dv/dt ruggednes
    • Excellent switching performance thanks to the extra driving source pin

All tools & software

    • 产品型号
      状态
      描述
      类型
      供应商

      STPOWER MOSFET Finder

      批量生产

      用于安卓和iOS的MOSFET产品查找应用

      Finder应用程序 ST
      STPOWER MOSFET Finder

      描述:

      用于安卓和iOS的MOSFET产品查找应用

EDA符号、封装和3D模型

STMicroelectronics - STH60N099DM9-2AG

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封装

3D model

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质量与可靠性

产品型号 Marketing Status 等级规格 符合RoHS级别 材料声明**
STH60N099DM9-2AG
批量生产
H2PAK-2 汽车应用 Ecopack2

STH60N099DM9-2AG

Package:

H2PAK-2

Material Declaration**:

PDF XML

Marketing Status

批量生产

Package

H2PAK-2

Grade

Automotive

RoHS Compliance Grade

Ecopack2

(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此,它们可能不是100%适用于特定的设备。有关特定设备的信息,请联系 销售支持

样片和购买

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STH60N099DM9-2AG
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STH60N099DM9-2AG 批量生产

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STH60N099DM9-2AG

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(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商