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该器件使用ST专有的STripFET™技术的第七代设计规则,具有新的栅极结构。因而,功率MOSFET在不同封装中都能呈现最低的RDS(on)。
主要特性
- 极低的栅极电荷
- 超低导通电阻
- 低栅极输入电阻
精选 视频
Learn how ST’s low-voltage power MOSFETs can help you to solve your EMI/EMC issues in motor control applications
开发工具硬件
产品型号 | 供货状态 | 封装 | 等级规格 | 符合RoHS级别 | Material Declaration** |
---|---|---|---|---|---|
STH80N10F7-2 | 批量生产 | H2PAK-2 | 工业 | Ecopack1 | |
STH80N10F7-2
Package:
H2PAK-2Material Declaration**:
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.