产品概述
描述
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
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所有功能
- AEC-Q101 qualified
- Among the lowest RDS(on) on the market
- Excellent FoM (figure of merit)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness
EDA符号、封装和3D模型
STMicroelectronics - STH80N10LF7-2AG
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符号
封装
3D模型
样片和购买
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| 产品型号 | Order from distributors | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度（ºC） | Country of Origin | Budgetary Price (US$)*/Qty | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | |||||||||||
| STH80N10LF7-2AG | distributors 无法联系到经销商，请联系我们的销售办事处 | NRND | EAR99 | NEC | Tape and Reel | H2PAK-2 | - | - | CHINA | | ||
distributors
无法联系到经销商，请联系我们的销售办事处
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