产品概述
描述
This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
-
所有功能
- AEC-Q101 qualified
- Fast-recovery body diode
- Lower RDS(on) per area vs previous generation
- Low gate charge, input capacitance and resistance
- 100% avalanche tested
- Extremely high dv/dt ruggedness
- Zener-protected
- Excellent switching performance thanks to the extra driving source pin
精选 视频
意法半导体提供全新的高压MDmesh M6和M9 STPOWER MOSFET，这些产品采用紧凑且散热效率高的TO-LL表面贴装型封装，可同时提供高的电气和热效率、外形紧凑和节省空间等特性，适用于SMPS、数据中心和太阳能微逆变器等电源转换应用。这些器件具有附加的Kelvin源引脚，可减小接通/关断开关损耗，有助于设计人员进一步提高效率。
EDA符号、封装和3D模型
STMicroelectronics - STHU47N60DM6AG
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Please select one model supplier :
符号
封装
3D模型
全部资源
| 资源标题 | 版本 | 更新时间 |
|---|
SPICE models (1)
| 资源标题 | 版本 | 更新时间 | ||
|---|---|---|---|---|
| ZIP | 1.0 | 07 Sep 2021 | 07 Sep 2021 |
样片和购买
| 产品型号 | Order from distributors | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度（ºC） | Country of Origin | Budgetary Price (US$)*/Qty | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | |||||||||||
| STHU47N60DM6AG | distributors 无法联系到经销商，请联系我们的销售办事处 | NRND | EAR99 | NEC | Tape and Reel | HU3PAK | - | - | JAPAN | | ||